Laser wire bonding for wire embedded dielectrics to integrated circuits

ABSTRACT

A method and apparatus for connecting a lead of a lead frame to a contact pad of a semiconductor chip using a laser or other energy beam is herein disclosed. The lead may be wire bonded to the contact pad by heating the ends of a wire until the wire fuses to the contact pad and lead or an energy-fusible, electrically-conductive material may be used to bond the ends of the wire to the contact pad and lead. In addition, this invention has utility for both conventional lead frame/semiconductor chip configurations and lead-over-chip configurations. In addition, with a lead-over-chip configuration, the lead may be directly bonded to the contact pad with a conductive material disposed between the lead and the contact pad.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation of application Ser. No.09/344,678, filed Jun. 25, 1999, pending, which is a continuation ofapplication Ser. No. 08/911,389, filed Aug. 14, 1997, now U.S. Pat. No.5,956,607, issued Sep. 21, 1999, which is a divisional of applicationSer. No. 08/654,192, filed May 28, 1996, now U.S. Pat. No. 5,731,244,issued Mar. 24, 1998.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] This invention relates generally to wire bonding lead frames tosemiconductor dice and, more specifically, to wire bonding a lead frameto a semiconductor die using a laser beam to provide the energynecessary to bond or fuse a wire to a lead of a lead frame and to acontact pad of a semiconductor die. The method and apparatus oflead-to-chip bonding herein described are applicable to either aconventional lead frame and chip arrangement or a lead-over-chip (LOC)arrangement, in any instance, where the lead of a lead frame is directlyor indirectly bonded to the contact pad of a semiconductor chip.

[0004] 2. State of the Art

[0005] Various types of semiconductor chips are connected to lead framesand subsequently encapsulated in plastic for use in a wide variety ofapplications. A conventional lead frame is typically formed from asingle continuous sheet of metal, typically by metal stampingoperations. The conventional lead frame includes an outer supportingframe, a central semiconductor chip supporting pad and a plurality ofleads, each lead having, in turn, a terminal bonding portion near thecentral chip supporting pad. Ultimately, the outer supporting frame ofthe lead frame is removed after the wire bonds between the contact padsof the semiconductor chip and the leads are made and the semiconductorchip and lead frame have been encapsulated.

[0006] In a LOC lead frame the lead frame has no central chip supportingpad with the semiconductor chip being held in position with respect tothe lead frame and leads by means of adhesive strips secured to theleads of the lead frame and the semiconductor chip.

[0007] A typical apparatus and method for forming the wire bonds betweenthe contact pads on a semiconductor chip and the leads of lead framesare illustrated in U.S. Pat. No. 4,600,138. As disclosed, a bond head isshown moving from a first bonding location to a second bonding location.The end of the wire is bonded to the first bonding location by the bondhead. The bond head moves vertically away from the first bondinglocation to draw a length of wire necessary to make the wire bond. Thebond head is then moved to the second bonding location with subsequentbonding of the wire to the second bonding location. The bond head isthen used to pull and subsequently break away the remaining wire fromthe second bonding location. The bond head is then ready to be moved toanother first bonding location for effecting another wire bond.

[0008] Typically, the bond head is heated to assist the formation of thewire bond. The heat and subsequent pressure applied by the bond headfuses the end of the wire to the contact pad. Ultrasonic vibration inconjunction with a heated bond head may also be used to affect a wirebond. Typically, there is a single bond head for making all of the wirebonds of the semiconductor chip. As should be recognized by thoseskilled in the art, such an operation is inherently mechanical in natureand thus limited to the speed of movement of the mechanical device.

[0009] One method of speeding up a conventional wire bonding process isto provide the heat necessary to effect a wire bond by utilizing heatgenerated from a laser beam to heat the bond head. Such apparatuses aredisclosed in U.S. Pat. Nos. 4,534,811 to Ainslie et al., and 4,845,354to Gupta et al. However, as the number of connections per semiconductorchip increase and the size of the leads decrease, such a bonding toolbecomes impractical.

[0010] It has also been recognized in the art to use laser beams to forma lead-to-chip bond. For example, a method for reflowing solder to bondan electrical lead to a solder pad using a laser, in which the solderpad, rather than the terminal, is irradiated by the laser beam, isdisclosed in U.S. Pat. No. 4,926,022 to Freedman. In addition, in U.S.Pat. No. 5,274,210 to Freedman et al., electrical connections may bemade by coating conductive elements with a non-flux, non-metalliccoating material making it possible to use a laser for bonding. Thelaser is either moved in a continuous sweep around all of theconnections or pulsed.

[0011] It has also been recognized in the art to use a laser beam tobond the bumps of an integrated circuit to a tape automated bonding(TAB) tape lead. TAB, in general, has been one attempt in the art toincrease the speed and efficiency of the chip-to-lead bonding process.For example, in U.S. Pat. Nos. 4,978,835 to Luijtjes et al. and5,049,718 and 5,083,007 to Spletter et al., a laser beam is directedonto the ends of the leads of a TAB tape.

[0012] None of the previously mentioned prior art references, however,have successfully utilized laser light to reduce the mechanicallimitations of the bonding process. More specifically, prior art deviceseither move the device relative to the laser for every bond, or a singlelaser beam to every bonding site. Thus, it would be advantageous toprovide an apparatus and method for forming wire bonds using a laser inwhich the laser need not move for each bond and where more than one bondcan be made substantially simultaneously.

SUMMARY OF THE INVENTION

[0013] Accordingly, the present invention provides a bonding apparatusand method of using the same for bonding any lead frame, either aconventional lead frame or a lead-over-chip (LOC) lead frame, to asemiconductor chip. Preferably, the semiconductor chip will include atleast one contact pad on its active surface for providing an output, orinput, as the case may be, of the chip. Likewise, the lead frame willinclude at least one lead to be connected to the contact pad of thechip. The chip/lead frame arrangement may be one where wire bonding isnecessary to make the electrical connection between the contact pad andthe lead, or a LOC arrangement where the lead of the lead frame extendsover the active surface of the chip and is bonded to the contact padwith a short wire or a bump of solder. In either case, the bond requiredto make the connection uses an energy beam from a beam-emitting energysource to provide the energy necessary to make the connection.

[0014] In a chip/lead frame arrangement where a wire bond is used tomake the electrical connection, the wire is aligned with the contact padand the lead is subsequently bonded or fused to each using a directedenergy beam. A beam of energy is focused on the site of the bond with alens or plurality of lenses. Moreover, the wire may be directly bondedor fused to the contact pad and lead by melting the wire with the energybeam, or an energy fusible, electrically conductive bonding material maybe provided proximate the bonding site.

[0015] In a preferred embodiment, the wire bonds at the contact pad andat the lead are substantially simultaneously bonded or fused. This maybe accomplished by using more than one beam emitting energy source todirect more than one beam of energy, each to a different bonding site,or providing a single beam emitting energy source and splitting the beaminto more than one smaller beam and directing the smaller beams todifferent bonding sites.

[0016] The beam emitting energy source used in conjunction with thepresent invention may be of various types known in the art. For example,the energy source may emit a laser beam, such as that produced by apulsed solid state laser, a carbon dioxide laser, a Nd:YAG laser, or aNd:YLF laser, a focused beam of light, a beam of radiant energy such asan electron beam, or a heat source, etc. In any case, the energy beam ispreferably directed to the bonding site by prisms, mirrors, fiberoptics, lenses and/or other reflective and/or deflective surfaces orcombinations thereof. More specifically, in one preferred embodiment,each beam of energy is directed by prisms or mirrors from the energysource toward each bonding site. At least one lens is provided betweeneach bonding site and the prisms or mirrors to further focus the beam ofenergy onto the bonding site. Each lens may be individually supported bya frame-like support structure or contained within an optical flat inwhich a plurality of lenses is formed. For a frame-like structure, thelenses may be moved and/or oriented to accommodate different chip/leadframe configurations. If the lenses are contained in an optical flat, adifferent optical flat may be used to accommodate various chip/leadframe configurations. In addition, the reflective and/or deflectivesurface may be articulatable to direct the energy beam to variousbonding sites. With such an articulatable configuration, variousconfigurations of lead frames and chips can be accommodated with thepresent invention.

[0017] In use, the energy beams are directed to a first set of bondingsites until the heat generated from the energy beams creates the bondsor fuses the bonds (i.e., wire bond or LOC bond) associated with thefirst set. The apparatus then translates the energy beams relative tothe chip to a second set of bonding sites to make a second set of bonds.This process is repeated until all of the bonds associated with thechip/lead frame arrangement are formed.

[0018] An indexing system may also be associated with the apparatus toindex chips, lead frames and other components into and out of thebonding location. The indexing system may comprise conveyors,articulating arms, magazines for housing the semiconductor devicecomponents, and other equipment known in the art. In addition, theentire system, from controlling the operation of the energy source tocontrolling which set of bonding sites are bonded to indexing thesemiconductor device components, is controlled by at least one or moremicroprocessors.

[0019] As previously mentioned, a semiconductor chip bonded to itsassociated lead frame, in accordance with the present invention, mayhave a conventional configuration where the contact pads are positionedproximate the periphery of the chip or a LOC configuration where thecontact pads are positioned closer to a center line of the chip. Ineither case, in a preferred embodiment, a thin flexible dielectricmaterial (foil) containing fully or partially embedded wires may beplaced, at least partially, over the surface of the chip containing thecontact pads and the leads of the lead frame. When properly positioned,the wires extend from the contact pads to the leads of the lead frame.The foil may be adhesively attached to the chip and/or lead frame, heldin place by a slight vacuum, or retained by a suitable clamping devicein order to maintain proper alignment of the wires relative to the chipand lead frame. At the ends of the each wire, an energy bondable,fusible, electrically conductive material (such as solder) may beprovided for bonding the ends of the wire to the semiconductor chip andlead frame. Similarly, the energy bondable, fusible, electricallyconductive material may be attached to the contact pads of the chipand/or the leads of the lead frame prior to positioning of the foil suchthat the energy fusible, electrically conductive material may be heatedand subsequently bonded to the ends of each wire.

[0020] For a LOC configuration where the leads of the lead frame extendover the contact pads, an energy bondable, fusible, electricallyconductive material (e.g., solder) may be provided between the lead andthe contact pad. The solder may be bumped onto the contact pads bymethods known in the art or attached to the ends of the leads to definea protuberance on the end of the lead so that when the lead frame issuperimposed over the chip, the protuberance of solder is positionedabove each contact pad. The solder may be bonded or fused to make theelectrical connection between the leads and the contact pads by heatingthe leads themselves with an energy beam or providing leads that defineopenings through which the beam may be directed directly onto thesolder. In yet another preferred embodiment, the ends of the leadsthemselves may be configured to contact the contact pads and may bebonded directly thereto by heating the lead.

[0021] A preferred embodiment of a semiconductor device, manufacturedaccording to the present invention, would comprise a semiconductor chiphaving a plurality of contact pads, a lead frame having a plurality ofleads, a foil layer or other suitable type material having a pluralityof wires at least partially embedded therein, and a laser-bondable,electrically-conductive material making the electrical connectionsbetween the wires and the contact pads and leads.

[0022] Although the bonding apparatus of the present invention has beendescribed in relation to several preferred embodiments, it is believedthat a major advantage of the apparatus, according to the presentinvention, is the efficient use of a beam emitting energy source, suchas a laser, to quickly and efficiently bond a lead frame to asemiconductor chip by reducing the mechanical movements generallyassociated with prior art bonding apparatuses. This and other featuresof the invention will become apparent from the following detaileddescription taken in conjunction with the accompanying drawings and asdefined by the appended claims.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0023]FIG. 1 is a schematic side view of a first embodiment of thelaser-bonding apparatus according to the present invention;

[0024]FIG. 2 is a schematic top view of an optical flat used in thelaser-bonding apparatus in FIG. 1;

[0025]FIG. 3A is a schematic bottom view of a wire-embedded foilaccording to the present invention;

[0026]FIG. 3B is a schematic side view of a wire-embedded foil shown inFIG. 3A;

[0027]FIG. 4 is a schematic side view of a LOC configuration accordingto the present invention;

[0028]FIG. 5 is a schematic side view of a second embodiment of thelaser-bonding apparatus according to the present invention;

[0029]FIG. 6 is a partial top view of a second embodiment of a lead of aLOC lead frame shown in FIG. 5;

[0030]FIG. 7 is a schematic side view of a third embodiment of thelaser-bonding apparatus according to the present invention;

DETAILED DESCRIPTION OF THE INVENTION

[0031] As illustrated in FIG. 1, the laser-bonding apparatus 10 iscomprised of a plurality of lasers 12, 14, 16, and 18 emitting laserbeams 20, 22, 24, and 26, respectively. The laser beams 20, 22, 24, and26 are directed toward lenses 28, 30, 32, and 34, respectively, byprisms 36, 38, 40 and 42. The lenses 28, 30, 32, and 34 focus the laserbeams 20, 22, 24, and 26 onto the bonding sites 44, 46, 48, and 50,respectively, associated with the semiconductor chip 52 and lead fingersor leads 54 and 68 of a lead frame. The lenses 28, 30, 32, and 34 areformed in a frame-like structure or an optical flat 56 above eachbonding site 44, 46, 48 and 50.

[0032] The optical flat 56, as shown in FIG. 2, has a plurality oflenses 57, 59, 61, and 63, such as lenses 28, 30, 32 and 34, formed inlongitudinal rows along the length of the optical flat 56 correspondingto the bonding sites of a semiconductor chip 52 and lead fingers 54 and68, such as bonding sites 44, 46, 48, and 50. As illustrated by thearrow and bar 65, the laser beams 20, 22, 24 and 26 are incrementallymoved across the optical flat from one set of lenses 57, 79, 61, and 63to the next until all of the bonds have been fused associated with aparticular semiconductor chip 52 and lead fingers 54 and 68.

[0033] The semiconductor chip 52 and lead fingers 54 and 68 aresupported on a platform or chip support 58. The chip support 58 may beheated so that heat generated by the laser beams 20, 22, 24, and 26 atthe bonding sites 44, 46, 48, and 50 do not create such an extreme pointof localized heating that could stress the semiconductor chip 52 and/orthe lead fingers 54 and 68. In addition, the chip support 58 may includestructure as is known in the art to help align the lead fingers 54 and68 relative to the semiconductor chip 52 and the semiconductor chip 52relative to the rest of the laser-bonding apparatus 10.

[0034] In order to secure and align the wires 60, necessary to make wirebonds between the semiconductor chip 52 and the lead fingers 54 and 68,as illustrated in FIGS. 3A and 3B, a foil, relatively-thin dielectricmaterial, or other suitable material 62 may be used to support aplurality of wires 60. The wires 60 may be fully or partially embeddedin the foil 62 so long as the foil 62 can maintain the relativepositions of the wires 60. At the end of each wire 60, anenergy-bondable, fusible, electrically-conductive material 64, such assolder or other material known in the art, may also be provided to makethe bond between the wires 60 and the bond sites 44, 46, 48, and 50. Aflux may also be applied to the ends 66 of the wires 60 to help thewires 60 bond to the bonding sites 44, 46, 48, and 50, whether anenergy-bondable, fusible, electrically conductive material 64 is used ornot.

[0035] As shown in FIGS. 1 and 3B, the foil 62 is contoured to fit overthe semiconductor chip 52 and extend down to the lead fingers 54 and 68of the lead frame. This contoured shape may be formed into the foil bybending the foil to correspond to the shape of the semiconductor chip52/lead fingers 54 and 68 configuration or may take this shape due tothe foil's 62 flexible nature. Because the foil 62 is relatively thinand flexible, it may be necessary to retain the foil 62 relative to thesemiconductor chip 52 and lead fingers 54 and 68 during the bondingprocess. Retaining the foil 62 may be accomplished by applying anadhesive to the underside 70 so that the foil 62 may be adhesivelybonded to the chip 52 and/or the lead fingers 54 and 68. In addition toor in lieu of adhesive retaining, the foil 62 may be secured duringbonding by retaining members 72 and 74 that hold the foil 62 relative tothe lead fingers 54 and 68 and a resilient pad 76 that holds the foil 62in place relative to the semiconductor chip 52. Moreover, the foil 62may be retained by providing a slight vacuum to the underside 70 of thefoil 62 to draw the foil 62 onto the leads 68 and the semiconductor chip52.

[0036] In addition, to a conventional semiconductor chip 52/lead fingers54 and 68 arrangement as illustrated in FIG. 1, the laser-bondingapparatus 10 of the present invention can also be used to wire bond aLOC arrangement, as illustrated in FIG. 4, where the leads 80 of thelead frame 82 extend over the active surface 84 of the semiconductorchip 86. Typically, such a semiconductor chip 86 will have a pluralityof contact pads 88 proximate the center of the chip 86. Thus, in orderto shorten the length of the wires 90 necessary to make an electricalconnection between the lead 80 and the contact pad 88, the leads 80extend over the active surface 84 proximate the contact pads 88. A foil92 containing wires 90 may also be used to house and support the wires90 in a similar manner to the foil 62 described in relation to FIGS. 3Aand 3B. In addition, retaining members 94, 96, and 98 may also beincorporated into the laser-bonding apparatus 10 to retain the foilrelative to the semiconductor chip 86 and lead frame 82 during thebonding process.

[0037] In an alternate embodiment of the laser-bonding apparatus 100depicted in FIG. 5, a LOC arrangement 101 is being bonded using a singlelaser 102. In this LOC arrangement 101, however, as opposed to thatillustrated in FIG. 4, the lead fingers or leads 104 and 105 of the leadframe 112 are being bonded directly to the contact pads 106 and 107,respectively, of the chip 108. In order to substantially simultaneouslybond the leads 104 and 105 to the contact pads 106 and 107,respectively, the laser beam 110 is split by a beam splitter 114, as isknown in the art. The two beams 116 and 118 are directed to focusinglenses 120 and 122 by mirrors or prisms 124 and 126. The focusing lenses120 and 122 focus the beams 116 and 118 onto the bonding sites 128 and130. The lenses 120 and 122 may be moved to accommodate variouschip/lead frame configuration and/or articulatable to direct the beams116 and 118 to various bonding sites. The prisms 124 and 126 may also bemovable and/or articulatable in the x-axis, y-axis, and z-axis.

[0038] Because the passivation layer 132 of the semiconductor chip 108typically extends above the contact pads 106 and 107, in order to makecontact with the leads 104 and 105, either a protuberance or otherextension must be provided on the leads 104 and 105 or the contact pads106 and 107 must be raised at least to the level of the passivationlayer 132. If a filler material 134 is used, the filler material 134should be conductive to provide an electrical path between the contactpads 106 and 107 and the leads 104 and 105. Moreover, the fillermaterial 134 must be bondable or fusible by the energy provided by thebeams 116 and 118. In addition, the leads 104 and 105 should be held inposition relative to the passivation layer 132 by a retainer, such asclamps 142 and 144. The semiconductor chip 108 may also be held inposition by a recess 146, defined by the chip support 148, sized andshaped to securely hold the chip 108 in place during bonding.

[0039] When bonding or fusing the leads 104 and 105 to the contact pads106 and 107, respectively, the top surfaces 136 and 138 of the leads 104and 105, respectively, may be heated by the beams 116 and 118, or, asillustrated in FIG. 6, an aperture or opening 140 can be provided ineach of the leads, such as lead 104, to expose the filler material 134directly to the beam 116.

[0040] Referring now to FIG. 7, a plurality of fiber optics 150, 152,154, and 156 are used to direct the laser beams 158, 160, 162, and 164emanating from the lasers 166, 168, 170 and 172, respectively. That is,as will be recognized by those skilled in the art, there may be otherways known in the art to direct the laser beams 158, 160, 162 and 164from the lasers 166, 168, 170 and 172 to the lenses 174, 176, 178 and180.

[0041] In all of the preferred embodiments of bonding apparatus,according to the present invention, the manipulation of the lasers, aswell as the indexing of chip components, such as the foil, die and leadframes, can be automated and controlled by one or more microprocessors200 as is known in the art.

[0042] It should be noted that the laser source is preferably anyhigh-power, pulsed, solid state or continuous wave laser, such asNd:YAG, Nd:YLF, Ar-ion, CO₂, Cu vapor, or other suitable lasers known inthe art, or a focused beam of light or a beam of energy or radiantenergy, such as an electron beam or heat source. It should be recognizedby those skilled in the art that the apparatus, according to the presentinvention, may be used on any semiconductor chip and associated leadframe having either conventional configurations as is known in the artor a specialized arrangement. Those skilled in the art will alsoappreciate that the number of lasers and beams therefrom may beincreased or decreased depending on the number of wire bonds to beformed at substantially the same time. Further, the invention may bepracticed on many semiconductor devices where wire bonding or LOCbonding is desired, such as bonding a chip to a printed circuit board.Thus, the terms “chip” and “lead frame,” as used herein, are intended asexemplary and not limiting, the invention having applicability to anysemiconductor-related structure employing a wire bond or a LOC-typebond. It will also be appreciated by one of ordinary skill in the artthat one or more features of any of the illustrated embodiments may becombined with one or more features from another to form yet anothercombination within the scope of the invention as described and claimedherein. Thus, while certain representative embodiments and details havebeen shown for purposes of illustrating the invention, it will beapparent to those skilled in the art that various changes in theinvention disclosed herein may be made without departing from the scopeof the invention, which is defined in the appended claims.

What is claimed is:
 1. A semiconductor device bonding apparatuscomprising: a bonding station; a semiconductor device support located atthe bonding station; an energy source providing a plurality of energybeams; and an optical structure mounted in a path of said plurality ofenergy beams for directing said plurality of energy beams toward aplurality of bonding sites of a semiconductor device at saidsemiconductor device support.
 2. The bonding apparatus of claim 1 ,wherein a bonding site of said semiconductor device component includesat least one contact pad of a semiconductor die.
 3. The bondingapparatus of claim 1 , wherein a bonding site of said plurality ofbonding sites of said semiconductor device includes at least one lead ofa lead frame.
 4. The bonding apparatus of claim 1 , wherein said atleast one energy source includes a plurality of energy beam emitters,each directing at least one energy beam of said plurality of energybeams toward a different bonding site of said plurality of bondingsites.
 5. The bonding apparatus of claim 1 , wherein said opticalstructure includes at least one reflective surface mounted thereon. 6.The bonding apparatus of claim 5 , wherein said at least one reflectivesurface includes a movable reflective surface.
 7. The bonding apparatusof claim 5 , wherein said at least one reflective surface includestranslatable reflective surface.
 8. The bonding apparatus of claim 5 ,wherein said at least one reflective surface includes at least oneprism.
 9. The bonding apparatus of claim 5 , wherein said at least onereflective surface includes at least one mirror.
 10. The bondingapparatus of claim 1 , wherein said optical structure includes at leastone fiber optic segment mounted in a path of at least one of saidplurality of energy beams.
 11. The bonding apparatus of claim 1 ,wherein said optical structure includes at least one beam splittermounted in a path of at least one of said plurality of energy beams. 12.The bonding apparatus of claim 1 , wherein said optical structureincludes at least one lens mounted in a path of at least one of saidplurality of energy beams.
 13. The bonding apparatus of claim 1 ,wherein said optical structure includes at least one articulatable lens.14. The bonding apparatus of claim 1 , wherein said optical structureincludes at least one optical flat mounted in a path of at least one ofsaid plurality of energy beams, said at least one optical flatcomprising a plurality of lenses, each lens of said plurality of lensespositioned to focus said at least one energy beam of said plurality ofenergy beams on said plurality of bonding sites.
 15. The bondingapparatus of claim 14 , wherein said at least one of said plurality ofenergy beams is movable relative to said at least one optical flatdirecting at least one of said plurality of energy beams through morethan one of said plurality of lenses.
 16. The bonding apparatus of claim1 , further including a chip indexer to index at least one semiconductordie and at least one lead frame at said chip support.
 17. The bondingapparatus of claim 1 , wherein said at least one energy source includesa translatable energy source relative to at least one of said pluralityof bonding sites of said semiconductor device component.
 18. The bondingapparatus of claim 4 , wherein said plurality of energy beam emittersincludes lasers.
 19. The bonding apparatus of claim 18 , wherein saidlasers includes a group comprising pulsed, solid state lasers, carbondioxide lasers, Nd:YAG lasers, or Nd:YLF laser.
 20. The bondingapparatus of claim 1 , wherein said at least one energy source includesa light source.
 21. The bonding apparatus of claim 1 , wherein said atleast one energy source includes a heat source.
 22. The bondingapparatus of claim 1 , further including at least one microprocessor forcontrolling said semiconductor device bonding apparatus.
 23. Asemiconductor device bonding apparatus for bonding a plurality ofconductors to a plurality of bonding sites on a semiconductor die, saidsemiconductor device bonding apparatus comprising: a bonding location; adie support located at a bonding location; at least one energy sourceproviding a plurality of energy beams; and an optical structuredirecting said plurality of energy beams toward said plurality ofbonding sites on said semiconductor die.
 24. The bonding apparatus ofclaim 23 , wherein a bonding site of said plurality of bonding sites ofsaid semiconductor die includes a contact pad of a semiconductor die.25. The bonding apparatus of claim 23 , wherein a bonding site of saidplurality of bonding sites of said semiconductor die includes a lead ofa lead frame.
 26. The bonding apparatus of claim 23 , wherein said atleast one energy source includes a plurality of energy beam emitters,each energy beam emitter of said plurality of energy beam emittersdirecting at least one of said plurality of energy beams toward abonding site of said plurality of bonding sites.
 27. The bondingapparatus of claim 23 , wherein said optical structure includes at leastone reflective surface.
 28. The bonding apparatus of claim 27 , whereinsaid at least one reflective surface includes an articulatablereflective surface.
 29. The bonding apparatus of claim 27 , wherein saidat least one reflective surface includes a translatable reflectivesurface.
 30. The bonding apparatus of claim 27 , wherein said at leastone reflective surface includes at least one prism.
 31. The bondingapparatus of claim 27 , wherein said at least one reflective surfaceincludes at least one mirror.
 32. The bonding apparatus of claim 23 ,wherein said optical structure includes at least one fiber optic segmentmounted in a path of at least one of said plurality of energy beams. 33.The bonding apparatus of claim 23 , wherein said optical structureincludes at least one beam splitter mounted in a path of at least one ofsaid plurality of energy beams.
 34. The bonding apparatus of claim 23 ,wherein said optical structure includes at least one lens mounted in apath of at least one of said plurality of energy beams.
 35. The bondingapparatus of claim 23 , wherein said optical structure includes at leastone articulatable lens.
 36. The bonding apparatus of claim 23 , whereinsaid optical structure includes at least one optical flat mounted in apath of at least one of said plurality of energy beams, said at leastone optical flat including a plurality of lenses, each positioned tofocus said at least one of said plurality of energy beams on saidplurality of bonding sites.
 37. The bonding apparatus of claim 36 ,wherein said at least one energy beam moves relative to said at leastone optical flat so that said at least one of said plurality of energybeams may be directed through more than one of said plurality of lenses.38. The bonding apparatus of claim 23 , further including a chip indexerfor indexing at least one semiconductor die and at least one lead frameto and from said chip support.
 39. The bonding apparatus of claim 23 ,wherein said at least one energy source translates relative to at leastone bonding site of said semiconductor chip.
 40. The bonding apparatusof claim 26 , wherein said plurality of energy beam emitters includeslasers.
 41. The bonding apparatus of claim 40 , wherein said lasersincludes a group comprising pulsed, solid state lasers, carbon dioxidelasers, Nd:YAG lasers, or Nd:YLF laser.
 42. The bonding apparatus ofclaim 23 , wherein said at least one energy source includes a lightsource.
 43. The bonding apparatus of claim 23 , wherein said at leastone energy source includes a heat source.
 44. The bonding apparatus ofclaim 23 , further including at least one microprocessor for controllingsaid bonding apparatus.